Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD

ABSTRACT

Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4  to WF 6  during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a division of patent application having thesame title and inventors that is identified by Ser. No. 07/841,967,filed Feb. 26, 1992, now U.S. Pat. No. 5,300,813, and the contents ofthat patent application are herein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to the manufacture of electricalconductor lines and vias that interconnect circuits on substrates suchas semiconductors and related packages and, more particularly, to a lowcost method of filling seams or holes in substrates using a combinationof a low resistivity metal deposited by physical vapor deposition (PVD)and a refractory metal deposited by chemical vapor deposition (CVD). Theinvention has particular application in submicron circuit manufacture.

2. Description of the Prior Art

Low resistivity metals such as aluminum and copper and their binary andternary alloys have been widely explored as fine line interconnects insemiconductor manufacturing. Typical examples of fine line interconnectmetals include Al_(x) Cu_(y), where the sum of x and y is equal to oneand both x and y are greater than or equal to zero and less than orequal to one, ternary alloys such as Al--Pd--Cu and Al--Pd--Nb,Al--Cu--Si, and other similar low resistivity metal based alloys.Today's emphasis on scaling down line width dimensions in very largescale integrated (VLSI) circuitry manufacture has led to reliabilityproblems including inadequate isolation, electromigration, andplanarization.

The IBM Technical Disclosure Bulletin to Ahn et al., Vol. 33, No. 5,October 1990, pages 217-218, discloses tungsten wrapped copperconductors and via holes fabricated by selective deposition using amixture of WF₆ and SiH₄ in the presence of hydrogen. Encapsulatedinterconnects like those of Ahn et al. have significantly higherresistance to electromigration and the small grain size of a selectivetungsten film reduces reflectance and thereby enhances the ability ofphotolithography tools to focus and resolve photoresist images. However,the tungsten layer formed using the low temperatures described by Ahn etal. would be silicon rich (e.g., 3-4%) and would not be a good diffusionbarrier for copper since copper resistivity would be degraded by theformation of copper silicide. Thus, it is difficult to deposit adiffusion barrier by selective means at low temperature. Moreover, theAhn et al. technique relies on the formation of a donut shape at thebottom of the lines which is normally created by the reaction ofoutgassing moisture and WF₆. The creation of the donut shape is believedto be not reliable.

Dalton et al., VMIC Conference, Jun. 12-13, 1990, pages 289-292, pointsout that a hot wall CVD reaction involving SiH₄ and H₂ reduction of WF₆to form a selective tungsten layer on an aluminum or alloy conductorresults in the incorporation of fluorine at the aluminum and tungsteninterface. The fluorine incorporation is a byproduct of the reaction ofWF₆ with aluminum as shown by Equation 1.

    WF.sub.6 +2Al→2AlF.sub.3 +W                         Eq. 1

The thin layer of aluminum fluoride will increase the series contactresistance of Metal 1 to Metal 2 vias. Dalton reported that sputteringTiW film on top of the aluminum prior to tungsten encapsulation usingCVD eliminates the problem of fluorine absorption.

Dalton discloses a traditional scheme for interconnect formation whereinaluminum is first deposited on a planar surface, it is overcoated withthe sputtered TiW layer (the only difference from traditionalprocessing), the aluminum is then patterned using photoresist imagingand developing followed by reactive ion etching (RIE). The resultingstructure is then overcoated with a passivation dielectric such as SiO₂or polyimide which itself is subsequently patterned, subjected to RIE,and metallized to create a multilayered structure. FIG. 1 is taken fromDalton and shows that multilayer devices produced by traditionalprocessing schemes have seams in the dielectric layers at the locationof the metal conductor lines and have a very irregular top surface.

It is difficult to achieve planarity of the dielectric using RIE.Planarity is in part dependent on the pattern density, and non-planarsurfaces result in puddling problems during subsequent metalization. Ifan RIE technique is used on polyimide, an etch stop is needed forremoval of photoresist on top of aluminum or copper based lines when thelines are etched down to the polyimide surface because the photoresistremoval process would also remove polyimide. RIE of any high coppercontent, aluminum or copper alloy is extremely difficult. A seriousdrawback of traditional processes which include metal RIE is that alarge number of metal shorts tend to develop with fine geometry due toparticle defects.

U.S. Pat. No. 4,824,802 to Brown et al. discloses a method for fillinginterlevel dielectric vias or contact holes in multilevel VLSImetalization structures. In particular, an intermediary metal such astungsten or molybdenum is either selectively deposited in openings in aninsulator or non-selectively deposited over the entire surface and inthe openings of the insulator by CVD, then a planarization resist, suchas azoquinonenovolac-type resists, polymethacrylates, polyimides, orother thermoplastic materials, is applied over the top of theintermediary metal. A planarized structure is then obtained by etchingto a level where the intermediary metal is even with the resist. TheBrown et al. method does not avoid metal corrosion and other problemsassociated with etching and is not useful for planarizing Al--Cu orother soft alloys because they have different properties from the hardermetals such as tungsten and molybdenum. Moreover, using the Brown et al.method, it is difficult to completely fill vias and lines.

U.S. Pat. No. 4,944,836 to Beyer et al. discloses a chemical-mechanicalpolishing technique which can be used to produce coplanarmetal/insulator films on a substrate. In particular, Beyer et al.contemplate patterning an underlying insulating layer, depositing anAl--Cu film, and then using a chemical-mechanical polishing techniquewherein an alumina slurry in dilute nitric acid is mechanically rubbedon the surface to remove Al--Cu. The polishing compound tends to have asignificantly higher removal rate for Al--Cu than the underlyinginsulator. The resulting structure includes Al--Cu lines planarized withthe insulating layer, and subsequent layers can easily be added in thefabrication of multilayer structures.

U.S. Pat. No. 4,956,313 to Cote et al. discloses a via filling andplanarization technique wherein Al--Cu alloy lines are patterned on topof a first passivation layer on a substrate, the lines are overcoatedwith a second passivation layer which is preferably a doped glass suchas phosphosilicate glass (PSG) or borophosphosilicate glass (BPSG) whichconforms over the contours of the Al--Cu alloy lines, vias are thenformed in the second passivation layer to expose the lines, and tungstenis applied over the surface of the second passivation layer and in thevias by CVD. It is reported in Cote et al. that CVD tungsten isconformal in character and can fill the vias without creating voids. Thestructure is then planarized by polishing with an abrasive slurry.

Neither Beyer et al. nor Cote et al. recognize that polishing is notpractical for low resistivity, soft metals such as Al--Cu alloys. Thisis because such materials tend to scratch, smear on the surface, andcorrode under the influence of the slurry. Moreover, creation of theplanarized structures in accordance with Cote et al. takes severalprocessing steps which increases costs and reduces output.

Rossnagel et al. J. Vac. Sci. Technol. 2:261 (March/April 1991)discloses a collimated magnetron sputter deposition technique fordepositing films that are compatible with lift-off patterning techniquesand hole filling. The technique is also presented in U.S. Pat. No.4,824,544 which is herein incorporated by reference.

Shiozaki et al., Abstracts of the 19th Conference on Solid State Devicesand Materials, discloses the use of selective tungsten deposition forhole filling on top of a high resistivity hard metal such as MoSi_(x)and is unrelated to encapsulation of a soft metal.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide low-cost,corrosion-free, wear-resistant, electromigration resistant, electricalconductor interconnecting circuits on a substrate on a submicron scaleusing a method with a high process yield.

It is another object of the invention to provide a technique forinexpensively forming encapsulated fine electrical lines havingparticular application in the manufacture of submicron circuits withoutexposing the lines to RIE.

It is yet another object of the invention to provide a low resistivityline or via with a wear resistant, hard cap which reduceselectromigration.

It is still another object of this invention to provide uniqueinterconnect lines formed from PVD low resistivity metal encapsulated byCVD refractory metal.

It is still another object of this invention to provide a method forpromoting adhesion of CVD tungsten in high aspect ratio vias orinterconnect lines which includes providing a liner in the vias orinterconnect lines formed from a refractory metal, or alloys orcompounds thereof, prior to CVD tungsten.

According to the invention, a simple and cost effective technique isprovided which results in electrical conductors that are corrosion-freeand exhibit resistance to wear and electromigration, and hasdemonstrated high process yield. Most importantly, this technique avoidscumbersome dielectric planarization steps completely as the depositiontakes place only on the planar surfaces to start with. The techniqueuses ordinary batch or single wafer PVD processes such as evaporation,sputtering or collimated sputtering followed by a conformal depositionof refractory metal.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, aspects and advantages will be betterunderstood from the following detailed description of a preferredembodiment of the invention with reference to the drawings, in which:

FIG. 1 is a cross-sectional side view of a prior art semiconductorsubstrate showing an uneven top surface;

FIGS. 2A through 2E are sequential cross-sectional side views of asemiconductor substrate illustrating one variation of the invention;

FIGS. 3A and 3B are sequential cross-sectional side views of a substratewith a device thereon overcoated by an insulator being planarized priorto patterning the insulator;

FIGS. 4A through 4E are sequential cross-sectional side views of asemiconductor substrate illustrating another variation of the invention;

FIG. 5A through 5E are sequential cross-sectional side views of asemiconductor substrate illustrating still another variation of theinvention;

FIG. 6 is a scanning electron micrograph (SEM) of a liner deposited in avia using PVD;

FIGS. 7A and 7B are sequential cross-sectional side views of asemiconductor substrate illustrating yet another variation of theinvention;

FIG. 8 is a cross-sectional view of an exemplary, multilevel, damascenestructure wherein PVD Al_(x) Cu_(y) alloy is capped with CVD tungsten;and

FIGS. 9A and 9B are cross-sectional SEM micrographs of structures withtungsten capped Al--Cu alloy lines prior to and afterchemical-mechanical polishing, respectively.

DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT OF THE INVENTION

The invention is generally related to methods for forming metal filledvias and conductor lines on a substrate where the vias and conductorlines include a soft, low resistivity metal which is capped with arelatively hard, refractory metal which is resistant to corrosion, wear,and electromigration, and where the vias and conductor lines are planarwith a dielectric layer coated on the substrate. Several different andnovel structures are created according to the procedures described inconjunction with FIGS. 2A-E, FIGS. 4A-E, and FIGS. 7A-B, depending onthe PVD deposition technique utilized. It should be understood that thetechniques and resulting structures are not limited to using anyspecific substrates and dielectric overlays (e.g., composites ofinorganic and organic layers like that shown in FIGS. 2A-E and 5A-E canbe used as well as single layers of inorganic or organic insulatormaterials). Moreover, the invention is not restricted to any particularmetal combinations; rather, an objective of the invention is to overlaya soft, low resistance metal or metal alloy with a hard refractory metalwhich can withstand wear, corrosion and electromigration. The inventionhas particular relevance to electrical systems which use aluminum andcopper alloys since it has been discovered that uniform, conformalcoatings of a refractory metal liner material can be deposited insubmicron vias and trenches with reliable high aspect ratio fillingusing PVD collimated sputtering. The refractory metal liner will serveas an effective diffusion barrier to copper for subsequent processing.

With reference to FIG. 2A, a substrate 10 is first overcoated with adielectric which is subsequently patterned. The substrate 10 ispreferably silicon, gallium arsenide, or some other material which issuitable for making integrated circuits. However, the substrate 10 maybe a ceramic, glass, or composite material commonly used for packagingsemiconductors and for making thin film interconnections. The substrate10 preferably has a plurality of semiconductor devices formed thereinwhich may include field effect transistors (FETs), bipolar transistors,resistors, Schottky diodes, or the like. It should be understood thatthe substrate 10 shown in each of FIGS. 3A-B, 4A-E, 5A-E, 7A-B, and 8,can have any of the attributes discussed above plus many otherattributes known within the art.

The dielectric composite shown in FIG. 2A includes top and bottominorganic dielectric layers 13 and 11, respectively, which may besilicon dioxide (SiO₂), silicon nitride (Si₃ N₄), or the like. Theinorganic layers 11 and 13 are both preferably deposited using plasmaenhanced chemical vapor deposition (PECVD) where SiO₂ is first depositedat 90 Torr on the conducting substrate 10 and Si₃ N₄ (0.075 to 0.1 μm)is provided as a barrier against mobile ion diffusion. A thicker organicdielectric layer 12, such as a polyimide, is deposited between theinorganic layers 11 and 13. Alternative to the dielectric compositecreated by layers 11, 12, and 13, a single layer of an inorganicdielectric, such as SiO₂, PSG, or BPSG, or an organic dielectric, suchas polyimide, may also be employed and may be deposited by any of anumber of well known techniques such as by growing in an oxidativeatmosphere, sputtering, or PECVD. While FIGS. 2A-E and 5A-E show the useof the composite structure and FIGS. 3A-B, 4A-E, and 7A-B show the useof a single inorganic or dielectric layer, it should be understood thatthe dielectric layer is not limiting to the practice of this inventionand that any dielectric (e.g., inorganic or organic) used by itself orin combination could be employed in the practice of this invention.

FIG. 2A shows an opening 14 formed in the dielectric composite, and thisopening may be a via or a trench for a conductive line. In VLSIapplications, the substrate 10 is likely to have several hundred tothousands of openings 14 like that shown in FIG. 2A where the resultingdense, complex pattern will ultimately interconnect circuits on or inthe substrate. The openings 14 are preferably formed using contrastenhanced lithography (CEL) followed by trench or hole etching with amultiwafer tool using CHF₃ and O₂ with an optimum overetch to ensurethat the opening 14 has the desired dimensions and extends to a contacton the surface of the substrate 10 for a via stud pattern. For linepatterns, the dielectric layers are preferably partially etched to adepth about 10% higher than the metal thickness to be employed. Whenetching polyimide 12, O₂ RIE at low temperatures is preferred. It shouldbe understood that the formation of the opening 14, as indicated inFIGS. 2A-E, 4A-E, 5A-E, and 7A-B, is well understood within the art andcan be created by many different techniques.

If the starting substrate 10 has a device 18 formed thereon as is shownin FIGS. 3A and 3B, as opposed to the flat substrate 10 with no upwardlyprotruding devices as is shown in FIG. 2A, the insulator 20 coated overthe device 18 should first be planarized before an opening 22 iscreated. Planarization can be achieved by RIE, chemical-mechanicalpolishing, a combination of both RIE and chemical-mechanical polishing,or by other means.

FIGS. 2B-2E illustrate a first variation of the present inventionwherein a planar patterned structure, which can be either the one shownin FIG. 2A or the one shown in FIG. 3B or any other structure which hasan opening 14 formed in an overcoated dielectric, then has a refractorymetal layer 15 deposited over the inorganic dielectric layer 13 and onthe exposed substrate 10 at the bottom of gap 14. This is accomplishedusing an evaporation PVD technique best described in Handbook of ThinFilm Technology, eds. Maissel and Glen, McGraw-Hill Co., 1983, pp.1-100. An important feature of employing evaporation PVD at this pointis that the refractory metal layer 15 does not coat the side walls ofthe opening 14 in the dielectric. It should be understood that PVDcollimated sputtering, similar to that described in U.S. Pat. No.4,824,544, can be used in the practice of the invention, but thatcollimated sputtering produces a conformal layer which would coat theside walls of opening 14, contrary to that which is shown in FIG. 2B.The use of collimated sputtering to create a refractory metal liner isdiscussed in more detail below. The refractory metal may be titanium(Ti), titanium alloys or compounds such as Ti/TiN, tungsten (W),titanium/tungsten (Ti/W) alloys, or chromium (Cr) or tantalum (Ta) andtheir alloys, or some other suitable material. If copper based lines orvias are to be formed, a refractory metal should be used which can actas a diffusion barrier to copper such that diffusion during subsequentprocessing of deposited copper in the opening 14 into the substrate 10is prevented.

Next, a single, binary or ternary metalization 16 is deposited over therefractory metal 15 by PVD using evaporation. Again, since evaporationis used, the side walls of opening 14 are not coated. However, it shouldbe understood that the metalization 16 could be applied by collimatedsputtering, in which case a conformal coating of the metalization withinthe opening 14 and on top of the dielectric stack. Preferably, themetalization is Al_(x) Cu_(y), where the sum of x and y is equal to oneand both x and y are greater than or equal to zero and less than orequal to one; however, ternary alloys such as Al--Pd--Cu andmulticomponent alloys such as Al--Pd--Nb--Au would also be suitable. Theprincipal characteristic of the metalization 16 is that it is a lowresistivity and soft material compared to the refractory metal 15.Preferably, the opening 14, which represents the line pattern orinterlevel via pattern, is filled with the metalization 16 to a depth of100 to 400nm below the surface of the line or via. It should beunderstood that the metalization 16 shown in FIGS. 4A-E, 5A-E, and 7A-Bwould be of the same sort described above.

FIG. 2C shows a refractory metal 17, such as tungsten, cobalt, nickel,molybdenum, or alloys/compounds such as Ti/TiN, deposited over thestructure. Deposition of the refractory metal 17 may be by one step CVDor by a two step process, as is best explained in FIGS. 4a-e, whereinthe first step involves collimated sputtering or the like of an adhesionpromoting compound such as titanium or titanium nitride to create aconformal blanket coating, and the second step includes depositing athin CVD layer of tungsten to achieve a higher degree of conformality.CVD deposition of the refractory metal is preferably achieved with SiH₄or H₂ reduction of WF₆. A particularly preferred CVD procedure involvesSiH₄ reduction of WF₆ followed by H₂ reduction of WF₆ because, on top ofa TiN layer, CVD of tungsten proceeds smoothly with SiH₄ reduction ofWF₆, but not with H₂ reduction. The refractory metal 17 provides a wearresistant, corrosion resistant, and electromigration resistant coatingto the underlying soft, low resistivity metalization 16 in opening 14. Aparticularly good advantage to using CVD with SiH₄ reduction of WF₆ isthat the ratio of SiH₄ to WF₆ can be varied to incorporate differentamounts of silicon into the tungsten to achieve beneficial properties.For example, it would be preferable to deposit the refractory metal 17at a 0.5 SiH₄ to WF₆ ratio while the opening 14 in the dielectric isbeing filled since so doing will result in a lower resistance refractorymetal; however, towards the top surface of the dielectric to deposit ata 2.0 SiH₄ to WF₆ ratio is preferable since this will result in moresilicon incorporation which has greater wear resistance. Using theabove-described CVD technique, the silicon doped tungsten can be used asa wear resistant coating or a polishing stop (e.g., it will be moreresistant to an alumina slurry in ferric nitrate used inchemical-mechanical polishing). Because the metalization 16 applied byevaporation does not coat the side walls of the opening 14, the CVDapplied refractory metal 17 creates tapering side walls around themetalization 16 and the metalization 16 becomes completely encapsulatedin refractory metal 17 and underlying refractory metal 15.

FIGS. 2D and 2E show that structure is planarized after the CVDapplication of the refractory metal 17 to yield a structure wherein atwo part conductive via or line, which includes a central, soft, lowresistivity metalization 16, encapsulated in a hard, wear resistantrefractory metal 17, has a top surface which is even with the topsurface of the dielectric composite on substrate 10. Planarization canbe accomplished in one or two steps by chemical-mechanical polishingwith a slurry such as alumina in dilute ferric nitrate or by RIE in thepresence of SF₆ or Cl₂ based chemistry. If chemical-mechanical polishingis employed, slurries can be selected to remove different metal layerson the stack. For example, Ti/TiN/W on top of copper can be removedusing the alumina in dilute ferric nitrate slurry, and then theremaining copper can be removed by switching to a slurry withoutalumina. Combinations of RIE removal of the refractory metal layer 17followed by chemical-mechanical polishing of the remaining metalization16 and remaining refractory metal 17 above the top organic or inorganiclayer 13 are also contemplated. A particular planarization procedurecontemplated includes removing tungsten refractory metal 17 by eitherchemical-mechanical polishing or RIE with SF₆ or Cl₂ based chemistrydown to an Al--Cu alloy metalization 16 surface as shown in FIG. 2D,then, using the tungsten as a mask, the Al--Cu CVD layer is etched downto the inorganic layer 13 surface, and finally, the remaining tungsten17 on the dielectric surface is either polished, wet etched or RIEetched in Cl₂ to yield the structure shown in FIG. 2E.

FIGS. 4A through 4E show another variation on the invention where likeelements to those identified above are indicated by the same numerals ineach of the Figures. As shown in FIG. 4A, copper metalization 16 isdeposited in an opening 14 created in an inorganic or organic dielectric15 formed on substrate 10. The chief difference between the structureshown in FIG. 4A and the structure shown in FIG. 2B is that prior todeposition of copper metalization, a thin layer of refractory metal 24such as titanium, titanium nitride (TiN), tungsten, tantalum, or alloysand compounds thereof, is deposited over the inorganic or organicdielectric 15 surface and inside the opening 14 via collimatedsputtering.

As noted above, collimated sputtering is generally described in U.S.Pat. No. 4,824,544 to Rossnagel et al. where a lift-off procedure isdiscussed. In the present invention, it has been discovered thatemploying collimated sputtering at higher pressures where scatteringdominates, as opposed to lower pressures where directional depositiondominates, allows for the creation of conformal coatings within a highaspect ratio, submicron level trench or via (e.g., both the side wallsand base are coated). The aspect ratio generally refers to the ratio ofthe height of a trench or via relative to its width in the case of atrench or its diameter in the case of a via. Trenches and vias withaspect ratios greater than two are generally considered to have a highaspect ratio. With collimated sputtering, scattering tends to dominateabove pressures of 1 mTorr (preferably around 3 mTorr), whiledirectional deposition dominates below 1 mTorr. Collimated sputtering isdescribed in more detail below in conjunction with FIGS. 5A-E and 6.

Completely coating the bottom surface and side walls of opening 14 witha refractory metal layer 24, as shown in FIG. 4a, is especiallyimportant when a copper based alloy metalization 16 is used since copperwill diffuse into the substrate 10 during subsequent high temperatureprocessing and ruin the device if no diffusion barrier is provided. Thecopper metalization 16 can be deposited by PVD using either evaporationor collimated sputtering or by other techniques. When submicron, highaspect ratio holes are to be filled, prior art CVD techniques have beenunsuccessful for filling the holes with aluminum and copper basedalloys; therefore, the preferred method for filling is by PVDtechniques.

Subsequent to deposition of metalization 16, a thin layer 26 oftitanium, Ti/TiN, tantalum or chromium is then applied over the coppermetalization 16 surface to promote adhesion. A refractory metal such astungsten is then deposited by CVD by SiH₄ or H₂ reduction of WF₆ toyield the structure shown in FIG. 4B. As explained above, varying theSiH₄ to WF₆ ratio during CVD can advantageously be used to make aharder, more wear resistant, tungsten with incorporated silicon layernear the top surface of the dielectric 15. The interfacial thin layer 26should be chosen so that it does not attack the underlying coppermetalization 16.

FIG. 4c shows that first tungsten is planarized by polishing or by RIEand FIG. 4d shows that copper is selectively removed by wet etching.When copper or copper alloy lines are being created, it is advantageousto use a wet etch solution based on hydrogen peroxide (H₂ O₂) andhydrogen tetaoxide (H₂ O₄) to planarize the copper. At room temperature,this type of solution will not etch tungsten or dielectric, but willetch off all copper positioned above the dielectric since it is notprotected from the wet etch solution (e.g., at room temperature, H₂ O₂has almost infinite selectivity). FIG. 4e shows that after the wet etch,the tungsten 17 can be selectively removed by RIE, polishing or othertechniques. A preferred method for removing the tungsten refractorymetal 17 which projects above the dielectric 15 surface is bychemical-mechanical polishing using an alumina in ferric nitrate slurryor the like. Because tungsten is a relatively hard material, it does notscratch or corrode when subjected to chemical-mechanical polishing.Rather than the three step approach discussed above, it may bepreferable to remove the tungsten refractory metal 17, the thin layer 26adhesion promoter, and the copper metalization 16 located above thesurface of the insulator 15 in one step using chemical-mechanicalpolishing.

FIGS. 5A through 5E show yet another variation on the invention wherelike numerals indicate like elements. FIG. 5A shows a refractory metalliner 28 is deposited in the opening 14 prior to metalization in a fullyor partially conformal manner using collimated sputtering like thatdescribed in Rossnagel et al. J. Vac. Sci. Technol. 2:261 (March/April1991) and U.S. Pat. No. 4,824,544 to Rossnagel et al. which are hereinincorporated by reference. In collimated sputtering, refractory metalatoms are passed through a honeycomb like structure with an aspect ratioof depth to area of greater than one at pressures greater than 0.5mTorr. Table 1 presents conditions which have been used for linerdeposition.

                  TABLE 1                                                         ______________________________________                                        DEPOSITION OF LINER BY COLLIMATION                                                       STEP COVERAGE   BOTTOM/TOP                                         ASPECT RATIO                                                                             SIDEWALL/TOP (%)                                                                              (%)                                                ______________________________________                                        1:1        38              60                                                 1:2        39              70                                                 1:4        42              100                                                NO                                                                            COLLIMATION                                                                   0          10              12                                                 ______________________________________                                    

In the investigations presented in Table 1, the pressure was varied from0.5 mT to 15 mT and the power was varied from 0.5 kW to 12 kW. Table 1clearly indicates poor step coverage when collimation is not employed.Using higher pressures (e.g., 3 mTorr) and a collimator with aspectratios of at least 1:1, the vias or contacts with aspect ratios of more7 to 8 were coated with Ti/TiN or Ti/W bilayers resulting in stepcoverage more than 40% at the bottom and more than 30% on the side wall.This is a significant advance in the art since it allows semiconductormanufacturers to provide a conformal layer within a high aspect ratiotrench or via which will promote adhesion of CVD tungsten. Moreover, aswill be discussed in more detail below, providing a conformal layer ofTiN or other suitable materials will provide an effective diffusionbarrier for copper based alloys. As discussed above, in order tothoroughly coat the side walls and bottom of a trench or via pressuresshould be employed where scattering deposition dominates (e.g., above 1mTorr) rather than at lower pressures where directional depositiondominates.

FIG. 6 presents an SEM micrograph of a refractory metal liner in a viacreated by PVD collimated sputtering as described above. FIG. 6 showsthat complete coverage of the bottom and sidewalls of the via can beobtained. To deposit TiN in-situ, N₂ plasma was used along with argon inthe presence of a titanium target. The liner can improve adhesion andprevent any attack of CVD tungsten on the underlying substrate. Theconformality of a liner increase when the aspect ratio of the collimatorincreases.

When copper lines or vias are to be employed in the structure, a robustliner which can serve as a diffusion barrier is required. Low pressurecollimation of a refractory liner (e.g., Ta, Ti/TiN, or Ti/W, etc.)created a porous structure on the side wall of the opening 14 in thedielectric. To prevent this porous structure and provide a densestructure on the side wall, a two step collimation process was employed.Specifically, in the first step, a thin liner was deposited using apressure below 0.8 mT to get bottom coverage of more than 60%, and inthe second step, the pressure was increased in-situ to 3 to 4 mT to geta dense microstructure on the sidewall using the same collimator. Priorto this invention, there was no means available for forming a liner inhigh aspect ratio, submicron holes, especially at low temperatures. Theresults were similar for Ti/W and Ti/TiN bilayer liners used as adiffusion barrier for CVD refractory metal 17 or low resistivity softmetal.

FIGS. 5B-E show similar steps to those shown in FIGS. 2B-E and FIGS.4A-E are performed in another variation on the invention. Like in FIG.4A, FIG. 5B shows that an adhesion promoter layer 26, such as Ti, Cr,Ta, Ti/W, or the like, is deposited by PVD evaporation over the top ofthe refractory metal liner and in the bottom of the gap 14. Like in FIG.2B, FIG. 5B shows Al--Cu alloy or other metalization 16 being depositedby PVD evaporation techniques to a level 100 to 400 nm below the surfaceof the dielectric. FIGS. 5C-E respectively show deposition of aconformal layer of tungsten or other refractory material to cap the lowresistivity metalization 16, planarizing the tungsten by RIE orpolishing, or the like, and planarizing the structure using the two stepwet etching of the aluminum-copper alloy with H₂ O₂ followed bychemical-mechanical polishing of tungsten as shown in FIGS. 4c and 4d orsimply planarizing by one step RIE or chemical-mechanical polishing. Forone step chemical-mechanical polishing, a slurry similar to that usedfor tungsten polishing can be used. Like the structure shown in FIG. 2E,the structure shown in FIG. 5E has a CVD refractory metal 17encapsulating a low resistivity metalization 16 where there is a taperedrefractory metal 17 region.

FIGS. 7A and 7B show yet another variation on the invention where likeelements are indicated by like numerals. As shown in FIG. 7A, both aconformal, preferably refractory metal, liner/diffusion barrier 28 and aconformal Al_(x) Cu_(y) or other suitable, low resistivity alloy ormetalization 16 layer are deposited in the opening in the organic orinorganic dielectric 15 on substrate 10 using PVD collimated sputteringprocedures. Subsequently, a refractory metal 17 capping layer, such astungsten, titanium, tantalum, or the like, is deposited by CVD toblanket coat the structure. FIG. 7B shows that the structure is thenplanarized using RIE, chemical-mechanical polishing, or by othertechniques. Contrasting the structure of FIG. 7B with the structure ofFIG. 5E, it can be seen that the shape of the via or line is quitedifferent. While both structures include a low resistivity metal 16capped by a refractory metal 17, the two metalizations will likely servedifferent environments.

Experimental tests have been conducted with the refractory metal cappedlines fabricated according to the techniques discussed above. In theexperiments, the line lengths varied from 13.5 cm to 50 cm with an areaof the chip close to 1.6 mm². The metal pitches varied from 1 μm to 2μm. The aspect ratio of the holes filled were from 2 to 8 and for lines2 to 4. Table 2 presents the resistance test results.

                  TABLE 2                                                         ______________________________________                                        LINE RESISTANCE OF TUNGSTEN CAPPED LOW                                        RESISTIVITY METAL AFTER POLISHING.sup.a                                                 Resistance    Resistance                                            Structure before W dep. after W dep.                                                                             Yield                                      ______________________________________                                        (A) CREATED USING EVAPORATION.sup.b                                           Ti(20 nm)/TiN(35 nm)/Al--Cu(800 nm)/W(200 nm)                                         0.042       0.04       95%                                            Ti(20 nm)/Al--Cu(800 nm)/W(200 nm)                                                    0.042       0.052      95%                                            Ti(20 nm)/Al--Cu(800 nm)/Ti(20 nm)/W(200 nm)                                          0.042       0.054      94%                                            Ti(20 nm)/TiN(25 nm)/CVD W(30 nm)/Al--Cu(1300 nm)/                            W(200 nm)                                                                             0.025       0.023      97%                                            Ti(50 nm)/TiN(25 nm)/Ti(20 nm)/Al-CU(1300 nm)/Ti(20 nm)/                      TiN(20 nm)/W(200 nm)                                                                  0.025       0.032      96%                                            Ti(50 nm)/TiN(50 nm)/Ti(50 nm)/Al--Cu(600 nm)/Ti(20 nm)/                      Cu(700 nm)/Ti(20 nm)/TiN(20 nm)/CVD W(200 nm)                                         0.023       0.021      100%                                           (B) CREATED USING COLLIMATED SPUTTERING.sup.c                                 Ti(20 nm)/TiN(35 nm)/Al--Cu(800 nm)/CVD W(200 nm)                                     0.042       0.04       84%                                            Ti (20 nm)/Al--Cu(800 nm)/CVD W(200 nm)                                               0.042       0.05       81%                                            Ti(20 nm)/W(20 nm)/Al--Cu(800 nm)/CVD W(200 nm)                                       0.040       0.039      85%                                            Ti(20 nm)/TiN(75 nm)/Cu(800 nm)/Ti(20 nm)/TiN(25 nm)/CVD                      W(200 nm)                                                                             0.024       0.022      80%                                            (C) CREATED USING SPUTTERING WITHOUT                                          COLLIMATION.sup.d                                                             Ti(20 nm)/TiN(35 nm)/Al--Cu(800 nm)/CVD W(200 nm)                                     0.040       0.04       86%                                            ______________________________________                                         .sup.a In all the experiments, the line lengths varied from 13.5 to 50 cm     with an area of the chip close to 1.6 mm.sup.2. The metal pitches varied      from 1 μm to 2 μm. The aspect ratio of the holes filled were from 2     to 8 and for lines, 2 to 4.                                                   .sup.b In the Evaporation Experiments, Ti/TiN bilayers were deposited by      collimation sputtering.                                                       .sup.c Colimation aspect ratio of 1:1.                                        .sup.d Sputtering pressure ranged between 0.5 to 0.8 mTorr.              

The results in Table 2 show that the process yield for the new techniqueis very good and that the line resistance is not altered greatly by thepresence of the tungsten cap. Some of the above data shows an increasein resistance when titanium is present directly under Al--Cu alloy. Thisis due to the formation of TiAl₃ at the interface. It has been foundthat providing a titanium alloy or compound (e.g., TiN) between titaniumand the aluminum-copper layer prevents the formation of TiAl₃ andthereby keeps the resistance lower. The bottom entry in Table 2 showsthat if sputtering without collimation is employed, the sputteringshould take place at lower pressures (e.g., below 1 mTorr) and bedirectionally dominated.

It is anticipated that performing RIE or a wet etch using H₂ O₂ or H₂ O₄on the refractory metal cap after chemical-mechanical polishing will beadvantageous in bringing the thickness of the capping layer down to abare minimum. A thick layer of a refractory metal would increasecapacitance, which is not desirable. By allowing for a post-polishingwet etch or RIE procedure (e.g., SF₆ etching), the semiconductordesigner will be able to use thick layers of refractory metal to providemaximum protection for the underlying low resistivity Al--Cu line or viaduring chemical-mechanical polishing, yet will be able to subsequentlyremove any excess refractory metal to achieve a structure which has verylittle overlying refractory metal. For example, a 500-600 nm thickrefractory layer can be applied and used for protection againstpolishing damage, and then the refractory layer can be reduced down to a50 nm thick layer by wet etching or RIE.

FIG. 8 shows an example of one multilevel semiconductor device whichincludes a top surface having tungsten capped Al_(x) Cu_(y) alloy linesflush with the top most insulator layer. As discussed in detail above,the vias or trenches with CVD tungsten preferably include a TiN linerformed by collimated sputtering to promote adhesion. Many othersemiconductor devices can be fabricated within the practice of thisinvention.

FIGS. 9a and 9b are SEM micrographs of a cross-section of asemiconductor device. FIG. 9a shows separated SiO₂ portions projectingup from a silicon surface with Al--Cu alloy between and on top of theSiO₂. Between and on top of the Al--Cu alloy is a CVD tungsten layer.FIG. 9a represents a structure with capped lines prior to polishing.FIG. 9b shows an SEM micrograph of the cross-section of a multilayerstructure after chemical-mechanical polishing has removed the tungstenand Al--Cu alloy above the top surface of the SiO₂ projections.

While the invention has been described in terms of its preferredembodiments, those skilled in the art will recognize that the inventioncan be practiced with modification within the spirit and scope of theappended claims.

Having thus described our invention, what we claim as new and desire tosecure by Letters Patent is as follows:
 1. A method of creating a linerin high aspect ratio, submicron holes and lines comprising the step ofsputtering a refractory metal or alloy through a collimator into a highaspect ratio, submicron hole or line in a dielectric at a pressure wherescattering deposition dominates to create a conformal coating to a pointwhere a liner thick enough to promote adhesion of chemical vapordeposition metal which will be subsequently deposited in said liner isproduced.
 2. A method as recited in claim 1 wherein the aspect ratio ofsaid hole or line is greater than 2:1, and said collimator has an aspectratio of greater than 1:1, and said pressure is greater than 1 mTorr. 3.A method of forming a liner in high aspect ratio, submicron holes andlines, comprising the steps of:sputtering a refractory metal or alloythrough a collimator into a high aspect ratio, submicron hole or line ina dielectric at a pressure where directional deposition dominates tocreate a conformal first layer in said high aspect ratio, submicron holeor line; and sputtering a refractory metal or alloy through a collimatorinto said high aspect ratio, submicron hole or line in said dielectricover said first layer at a pressure where scattering depositiondominates.
 4. A method as recited in claim 3 wherein the same collimatoris used for both sputtering steps and said first sputtering step isperformed at a pressure below 1 mTorr and said second sputtering step isperformed at a pressure above 1 mTorr.
 5. A method as recited in claim 3wherein said refractory metal sputtered in said second sputtering stepis selected to prevent diffusion of copper and alloys thereof.
 6. Amethod of creating metalization lines and vias on a substrate,comprising the steps of:forming an opening in a dielectric positioned ona substrate, said opening having a top and a bottom; depositing a firstrefractory metal or alloy or compound on a top surface of saiddielectric and at a bottom of said opening; depositing a low resistivitymetal or alloy over said refractory metal or alloy on said top surfaceof said dielectric and at said bottom of said opening to a point belowsaid top of said opening; depositing a second refractory metal or alloyover said low resistivity metal or alloy on said refractory metal oralloy on said top surface of said dielectric and at said bottom of saidopening; and removing said first refractory metal or alloy or compound,said low resistivity metal or alloy and said second refractory metal oralloy from all points above said top of said dielectric, whereby aplanar structure is produced which includes a metalization site having alow resistivity metal or alloy capped by a refractory metal or alloythat is planarized with said dielectric, said refractory metal or alloybeing applied to said low resistivity metal or alloy at a temperaturesuch that said low resistivity metal or alloy is unmelted, said lowresistivity metal or alloy in said opening being encapsulated andwherein a liner is produced conforming to side walls of said opening. 7.A method of creating metalization lines and vias on a substrate,comprising the steps of:forming an opening in a dielectric positioned ona substrate, said opening having a top and a bottom; depositing a firstrefractory metal or alloy or compound on a top surface of saiddielectric and at a bottom of said opening; depositing a low resistivitymetal or alloy over said refractory metal or alloy on said top surfaceof said dielectric and at said bottom of said opening to a point belowsaid top of said opening; depositing a second refractory metal or alloyover said low resistivity metal or alloy on said refractory metal oralloy on said top surface of said dielectric and at said bottom of saidopening; and removing said first refractory metal or alloy or compound,said low resistivity metal or alloy, and said second refractory metal oralloy from all points above said top of said dielectric, whereby aplanar structure is produced which includes a metalization site having alow resistivity metal or alloy capped by a refractory metal or alloythat is planarized with said dielectric, said refractory metal or alloybeing applied to said low resistivity metal or alloy at a temperaturesuch that said low resistivity metal or alloy is unmelted, wherein saidstep of depositing said first refractory metal or alloy or compound isachieved using collimated sputtering and a liner is produced whichconforms to all inside surfaces of said opening and said top surface ofsaid dielectric.
 8. A method as recited in claim 7 wherein saidcollimated sputtering is performed by the steps ofsputtering through acollimator a first thin layer of said refractory metal or alloy orcompound into said opening at a first pressure where directionaldeposition dominates; and sputtering through a collimator into saidopening over said first thin layer a second thin layer of saidrefractory metal or alloy or compound at a second pressure wherescattering deposition dominates.
 9. A method as recited in claim 8wherein said first pressure in said first sputtering step is performedbelow 1 mTorr and said second pressure in said second sputtering step isperformed above 1 mTorr.
 10. A method as recited in claim 7 wherein saidcollimated sputtering is performed by sputtering said refractory metalor alloy or compound through a collimator into said opening at apressure where scattering deposition dominates.
 11. A method as recitedin claim 10 wherein said pressure is above 1 mTorr.
 12. A method asrecited in claim 7 wherein said step of depositing said low resistivitymetal or alloy is achieved using physical vapor deposition and said stepof depositing said second refractory metal or alloy is achieved usingchemical vapor deposition.
 13. A method as recited in claim 12 whereinsaid physical vapor deposition is by evaporation, whereby said lowresistivity metal or alloy within said opening will have tapered sidewalls and said second refractory metal or alloy fills said regionsbetween said liner and said low resistivity metal or alloy.
 14. A methodas recited in claim 12 wherein said physical vapor deposition is bycollimated sputtering, whereby said low resistivity metal or alloy fillsa first volume of said opening and said refractory metal fills a secondvolume of said opening to create said planar structure.
 15. A method asrecited in claim 6 wherein said step of depositing said low resistivitymetal or alloy is achieved using physical vapor deposition and said stepof depositing said second refractory metal or alloy is achieved usingchemical vapor deposition.
 16. A method as recited in claim 15 whereinsaid physical vapor deposition is by evaporation, whereby said lowresistivity metal or alloy within said opening will have tapered sidewalls and said second refractory metal or alloy fills said regionsbetween said liner and said low resistivity metal or alloy.
 17. A methodas recited in claim 15 wherein said physical vapor deposition is bycollimated sputtering, whereby said low resistivity metal or alloy fillsa first volume of said opening and said refractory metal fills a secondvolume of said opening to create said planar structure.
 18. A method ofcreating metalization lines and vias on a substrate, comprising thesteps of:forming an opening in a dielectric positioned on substrate,said opening having a top and a bottom; depositing a first refractorymetal or alloy or compound on a top surface of said dielectric and at abottom of said opening; depositing a low resistivity metal or alloy oversaid refractory metal or alloy on said top surface of said dielectricand at said bottom of said opening to point below said top of saidopening; depositing a second refractory metal or alloy over said lowresistivity metal or alloy on said refractory metal or alloy on said topsurface of said dielectric and at said bottom of said opening; andremoving said first refractory metal or alloy or compound, said lowresistivity metal or alloy, and said second refractory metal or alloyfrom all points above said top of said dielectric, whereby a planarstructure is produced which includes a metalization site having a lowresistivity metal or alloy capped by a refractory metal or alloy that isplanarized with said dielectric, said refractory metal or alloy beingapplied to said low resistivity metal or alloy at a temperature suchthat said low resistivity metal or alloy is unmelted, wherein said stepof depositing said first refractory metal or alloy is achieved usingevaporation, whereby said refractory metal coats only said bottom ofsaid opening but not side walls of said opening.
 19. A method as recitedin claim 6 wherein said step of depositing said second refractory metalis performed by chemical vapor deposition of tungsten using SiH₄reduction of WF₆.
 20. A method as recited in claim 19 wherein said SiH₄reduction of WF₆ is followed by H₂ reduction of WF₆.
 21. A method asrecited in claim 19 further comprising the step of varying a ratio ofSiH₄ to WF₆ so that at least one region of said tungsten has moreincorporated silicon than another region.
 22. A method as recited inclaim 19 wherein said step of varying is adjusted to produce a region oftungsten having more incorporated silicon near said surface of saidmetallization.
 23. A method as recited in claim 6 further comprising thestep of depositing an adhesion promoting layer after said step ofdepositing said first refractory metal or alloy or compound and beforesaid step of depositing said low resistivity metal or alloy.
 24. Amethod of creating metalization lines and vias on a substrate,comprising the steps of:forming an opening in a dielectric positioned onsubstrate, said opening having a top and a bottom; depositing a firstrefractory metal or alloy or compound on a top surface of saiddielectric and at a bottom of said opening; depositing a low resistivitymetal or alloy over said refractory metal or alloy on said top surfaceof said dielectric and at said bottom of said opening to point belowsaid top of said opening; depositing a second refractory metal or alloyover said low resistivity metal or alloy on said refractory metal oralloy on said top surface of said dielectric and at said bottom of saidopening; and removing said first refractory metal or alloy or compound,said low resistivity metal or alloy, and said second refractory metal oralloy from all points above said top of said dielectric, whereby aplanar structure is produced which includes a metalization site having alow resistivity metal or alloy capped by a refractory metal or alloythat is planarized with said dielectric, said refractory metal or alloybeing applied to said low resistivity metal or alloy at a temperaturesuch that said low resistivity metal or alloy is unmelted, wherein saidstep of removing said first refractory metal or alloy or compound, saidlow resistivity metal or alloy and said second refractory metal or alloyincludes the step of reactive ion etching material above a top surfaceof said dielectric.
 25. A method of creating metalization lines and viason a substrate, comprising the steps of:forming an opening in adielectric positioned on a substrate, said opening having a top and abottom; depositing a first refractory metal or alloy or compound on atop surface of said dielectric and at a bottom of said opening;depositing a low resistivity metal or alloy over said refractory metalor alloy on said top surface of said dielectric and at said bottom ofsaid opening to a point below said top of said opening; depositing asecond refractory metal or alloy over said low resistivity metal oralloy on said refractory metal or alloy on said top surface of saiddielectric and at said bottom of said opening; and removing said firstrefractory metal or alloy or compound, said low resistivity metal oralloy, and said second refractory metal or alloy from all points abovesaid top of said dielectric, whereby a planar structure is producedwhich includes a metalization site having a low resistivity metal oralloy capped by a refractory metal or alloy that is planarized with saiddielectric, said refractory metal or alloy being applied to said lowresistivity metal or alloy at a temperature such that said lowresistivity metal or alloy is unmelted, wherein said step of removingsaid first refractory metal or alloy or compound, said low resistivitymetal or alloy and said second refractory metal or alloy includes thestep of chemical-mechanical polishing material above a top surface ofsaid dielectric.
 26. A method of creating metalization lines and vias ona substrate, comprising the steps of:forming an opening in a dielectricpositioned on a substrate, said opening having a top and a bottom;depositing a first refractory metal or alloy or compound on a topsurface of said dielectric and at a bottom of said opening; depositing alow resistivity metal or alloy over said refractory metal or alloy onsaid top surface of said dielectric and at said bottom of said openingto a point below said top of said opening; depositing a secondrefractory metal or alloy over said low resistivity metal or alloy onsaid refractory metal or alloy on said top surface of said dielectricand at said bottom of said opening; and removing said first refractorymetal or alloy or compound, said low resistivity metal or alloy, andsaid second refractory metal or alloy from all points above said top ofsaid dielectric, whereby a planar structure is produced which includes ametalization site having a low resistivity metal or alloy capped by arefractory metal or alloy that is planarized with said dielectric, saidrefractory metal or alloy being applied to said low resistivity metal oralloy at a temperature such that said low resistivity metal or alloy isunmelted, wherein said step of removing said first refractory metal oralloy or compound, said low resistivity metal or alloy and said secondrefractory metal or alloy includes both the steps of reactive ionetching and chemical-mechanical polishing material above a top surfaceof said dielectric.
 27. A method of creating metalization lines and viason a substrate, comprising the steps of:forming an opening in adielectric positioned on substrate, said opening having a top and abottom; depositing a first refractory metal or alloy or compound on atop surface of said dielectric and at a bottom of said opening;depositing a low resistivity metal or alloy over said refractory metalor alloy on said top surface of said dielectric and at said bottom ofsaid opening to a point below said top of said opening; depositing asecond refractory metal or alloy over said low resistivity metal oralloy on said refractory metal or alloy on said top surface of saiddielectric and at said bottom of said opening; and removing said firstrefractory metal or alloy or compound, said low resistivity metal oralloy, and said second refractory metal or alloy from all points abovesaid top of said dielectric, whereby a planar structure is producedwhich includes a metalization site having a low resistivity metal oralloy capped by a refractory metal or alloy that is planarized with saiddielectric, said refractory metal or alloy being applied to said lowresistivity metal or alloy at a temperature such that said lowresistivity metal or alloy is unmelted, wherein said step of removingsaid first refractory metal or alloy or compound, said low resistivitymetal or alloy and said second refractory metal or alloy includes thestep of wet etching with hydrogen peroxide or hydrogen tetraoxide.
 28. Amethod as recited in claim 24 further comprising the step of removingexcess refractory metal or alloy above said low resistivity metal oralloy after said step of reactive ion etching.
 29. A method as recitedin claim 25 further comprising the step of removing excess refractorymetal or alloy above said low resistivity metal or alloy after said stepof chemical-mechanical polishing.
 30. A method of forming metalizationlines and vias on a substrate, comprising the steps of:forming anopening in a dielectric positioned on a substrate, said opening having atop and a bottom; depositing a first metal or alloy or compound on a topsurface of said dielectric and at a bottom of said opening; depositing asecond metal or alloy over said first metal or alloy on said top surfaceof said dielectric and at said bottom of said opening to a point belowsaid top of said opening; depositing a third metal or alloy over saidsecond metal or alloy on said first metal or alloy or compound on saidtop surface of said dielectric and at said bottom of said opening, saidthird metal or alloy being relatively harder than said second metal oralloy; and removing said first metal or alloy or compound, said secondmetal or alloy, and said third metal or alloy from all points above saidtop of said dielectric, whereby a planar structure is produced whichincludes a metalization site having a second metal or alloy capped by athird metal or alloy, having a thickness so as to minimize a capacitanceof the third metal or alloy, that is relatively harder than said secondmetal or alloy and is planarized with said dielectric, wherein saidsecond metal or alloy is a metal having a resistivity lower than that ofsaid third metal and said third metal is a refractory metal and whereinsaid third metal is deposited on said second metal at a temperature suchthat said second metal is unmelted.
 31. A method as recited in claim 30wherein said step of depositing said first metal or alloy or compound isachieved by sputtering at a pressure below 1 mTorr without collimationto produce a liner which conforms to all inside surfaces of saidopening.
 32. A method as recited in claim 30 wherein said step ofdepositing said second metal or alloy is achieved by sputtering at apressure below 1 mTorr without collimation to fill said opening.
 33. Amethod as recited in claim 30 wherein said step of depositing said firstmetal or alloy or compound is achieved using collimated sputtering and aliner is produced which conforms to all inside surfaces of said opening.34. A method as recited in claim 6 wherein said step of depositing saidfirst refractory metal or alloy or compound is achieved by sputtering ata pressure below 1 mTorr without collimation to produce a liner whichconforms to all inside surfaces of said opening.
 35. A method ofcreating a liner in high aspect ratio, submicron holes and linescomprising the step of sputtering a metal or alloy into a high aspectratio, submicron hole or line in a dielectric at a pressure wheredirectional deposition dominates, without collimation, to create aconformal coating to a point where a liner thick enough to promoteadhesion of a chemical vapor deposition metal which will be subsequentlydeposited in said liner is produced.
 36. A method as recited in claim 35wherein said pressure where direction deposition dominates is belowapproximately 1 mTorr.
 37. A method of forming micron and sub-micronmetalization lines and vias on a substrate, comprising the stepsof:forming a micron or sub-micron sized opening in a dielectricpositioned on a substrate, said opening having a top and a bottom; andfilling said opening with a metal or metal alloy by sputtering saidmetal or metal alloy at a pressure below 1 mTorr without collimationinto said micron or sub-micron sized opening, said metal or metal alloyuniformly filling said micron or sub-micron sized opening from saidbottom towards said top to form a conformal coating thereover.